Title :
A Direct 100 GHz Parametric CMOS Tripler
Author :
Kabir, Shariar ; Magierowski, S. ; Messier, G.G. ; Zhixing Zhao
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
Abstract :
The first direct anti-series CMOS tripler is described in this letter. MOS varactors are arranged in a back-to-back configuration free of the self-bias problem that prevents standard Schottky varactors from employing such an arrangement. Implemented in 130 nm CMOS, the circuit achieves a 28 dB conversion loss at 102 GHz with an output power of -20 dBm.
Keywords :
CMOS integrated circuits; field effect MIMIC; frequency multipliers; millimetre wave frequency convertors; varactors; MOS varactors; Schottky varactors; direct anti-series CMOS tripler; frequency 100 GHz; frequency 102 GHz; loss 28 dB; parametric CMOS tripler; self-bias problem; size 130 nm; CMOS; frequency multiplier; millimeter-wave; parametric circuit; tripler;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2250271
