An optoelectronic CMOS memory circuit for parallel detection and storage of optical data

Author

Sayles, Andre H. ; Uyemura, John P.

Author_Institution

US Mil. Acad., West Point, NY, USA

Volume

26

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

1110

Lastpage

1115

Abstract

A CMOS static RAM (SRAM) circuit capable of detecting and storing optically transmitted data is described. Bits of data are transferred to the memory circuit via an array of parallel light beams. A 16-b optoelectronic SRAM was fabricated in a standard bulk CMOS process and tested using argon and helium-neon lasers. Data contained in an array of 16 light beams with an average power of 3.35 μW/pixel were successfully transferred to the SRAM in parallel fashion. The storage of the optical information was verified by electronically addressing each cell. The optical data transfer technology is extended to other systems in which high speed and parallelism are essential

Keywords

CMOS integrated circuits; SRAM chips; integrated optoelectronics; optical storage; parallel processing; SRAM; gas lasers; light beam array; optical data transfer technology; optoelectronic CMOS memory circuit; parallel detection; parallel light beams; standard bulk CMOS process; static RAM; Argon; CMOS memory circuits; CMOS process; Circuit testing; High speed optical techniques; Laser beams; Optical arrays; Optical detectors; Random access memory; Read-write memory;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.90064

Filename

90064