Title :
An optoelectronic CMOS memory circuit for parallel detection and storage of optical data
Author :
Sayles, Andre H. ; Uyemura, John P.
Author_Institution :
US Mil. Acad., West Point, NY, USA
fDate :
8/1/1991 12:00:00 AM
Abstract :
A CMOS static RAM (SRAM) circuit capable of detecting and storing optically transmitted data is described. Bits of data are transferred to the memory circuit via an array of parallel light beams. A 16-b optoelectronic SRAM was fabricated in a standard bulk CMOS process and tested using argon and helium-neon lasers. Data contained in an array of 16 light beams with an average power of 3.35 μW/pixel were successfully transferred to the SRAM in parallel fashion. The storage of the optical information was verified by electronically addressing each cell. The optical data transfer technology is extended to other systems in which high speed and parallelism are essential
Keywords :
CMOS integrated circuits; SRAM chips; integrated optoelectronics; optical storage; parallel processing; SRAM; gas lasers; light beam array; optical data transfer technology; optoelectronic CMOS memory circuit; parallel detection; parallel light beams; standard bulk CMOS process; static RAM; Argon; CMOS memory circuits; CMOS process; Circuit testing; High speed optical techniques; Laser beams; Optical arrays; Optical detectors; Random access memory; Read-write memory;
Journal_Title :
Solid-State Circuits, IEEE Journal of
