DocumentCode
1434115
Title
Ion implantation in AlxGa1-xAs: damage structures and amorphization mechanisms
Author
Lagow, Benjamin W. ; Turkot, Britt A. ; Robertson, Ian M. ; Coleman, James J. ; Roh, S.D. ; Forbes, David V. ; Rehn, Lynn E. ; Baldo, Peter M.
Author_Institution
Frederick Seitz Mater. Res. Lab., Illinois Univ., Urbana, IL, USA
Volume
4
Issue
4
fYear
1998
Firstpage
606
Lastpage
618
Abstract
We review previous research on ion implantation in AlxGa1-xAs-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms
Keywords
III-V semiconductors; aluminium compounds; amorphisation; gallium arsenide; ion implantation; semiconductor heterojunctions; AlxGa1-xAs; AlxGa1-xAs-GaAs heterostructures; AlGaAs-GaAs; amorphization mechanisms; damage accumulation; damage structures; direct impact amorphization mechanisms; ion implantation; point-defect buildup; review; Ion implantation; Laboratories; Lattices; Nuclear electronics; Optoelectronic devices; Production; Radiation effects; Semiconductor materials; Silicon devices; Solids;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.720470
Filename
720470
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