Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

Author

Yuan, Shu ; Jagadish, Chennupati ; Kim, Yong ; Chang, Yong ; Tan, Hark Hoe ; Cohen, Richard M. ; Petravic, Mladen ; Van Dao, Lap ; Gal, Mike ; Chan, Michael C Y ; Li, E. Herbert ; Jeong-seok, O. ; Zory, Peter S., Jr.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

4

Issue

4

fYear

1998

Firstpage

629

Lastpage

635

Abstract

Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing

Keywords

aluminium compounds; chemical interdiffusion; gallium arsenide; interstitials; photoluminescence; rapid thermal processing; vacancies (crystal); GaAs; GaAs-AlGaAs; GaAs-AlGaAs quantum-well structures; GaAs-AlGaAs quantum-wire structures; V-groove patterned GaAs substrates; anodic oxide; anodic-oxide-induced intermixing; enhanced lateral confinement; group-III vacancies; interstitials; photoluminescence energy shift; quantum-wire PL; rapid thermal processing; Councils; Dielectrics; Gallium arsenide; Materials science and technology; Optical device fabrication; Photoluminescence; Quantum well lasers; Quantum wells; Rapid thermal processing; Wires;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.720473

Filename

720473