DocumentCode
1434193
Title
Modulation of the second-order nonlinear tensor components in multiple-quantum-well structures
Author
Aitchison, J.Stewart ; Street, M.W. ; Whitbread, N.D. ; Hutchings, D.C. ; Marsh, John H. ; Kennedy, G.T. ; Sibbett, Wilson
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
4
Issue
4
fYear
1998
Firstpage
695
Lastpage
700
Abstract
In this paper, we present experimental results which demonstrate that quantum-well intermixing techniques can be used to modulate the magnitude of the second-order nonlinear coefficient χ(2). Impurity-free vacancy disordering with SiO2 and Ga2O3 caps was used to modulate the position of the band edge and hence, the magnitude of χeff(2) . Using a coupled quantum-well structure we were able to demonstrate modulation of the d33 tensor components associated with the asymmetric structure and of the d14 component associated with the bulk crystal structure
Keywords
electro-optical modulation; nonlinear optics; optical waveguides; semiconductor quantum wells; vacancies (crystal); Ga2O3; Ga2O3 caps; SiO2; asymmetric structure; band edge position modulation; bulk crystal structure; coupled quantum-well structure; d14 component; d33 tensor components; impurity-free vacancy disordering; multiple-quantum-well structures; quantum-well intermixing techniques; second-order nonlinear coefficient; second-order nonlinear tensor component modulation; Birefringence; Frequency conversion; Nonlinear optics; Optical frequency conversion; Optical waveguides; Quantum cascade lasers; Quantum well devices; Quantum wells; Semiconductor lasers; Tensile stress;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.720481
Filename
720481
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