A theoretical analysis of quantum-wire fabrication by vacancy-enhanced interdiffusion of quantum wells

Author

Chan, K.S. ; Wong, Y.H. ; Pun, Edwin Y B ; Ho, H.P. ; Chung, Po S.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong

Volume

4

Issue

4

fYear

1998

Firstpage

701

Lastpage

705

Abstract

The fabrication of quantum-wire structures using vacancy enhanced interdiffusion of quantum wells is analyzed theoretically. A phenomenological equation is used to describe the effects of strain on vacancy diffusion. The quantum-wire confinement potentials are studied as a function of the trench opening widths and the separation distances from the SiO₂-AlGaAs interface. The lateral confinement energy is not a monotonic function of the trench opening width. It first increases and then decreases when the trench opening width is decreased. When the separation distance of the quantum wire from the interface is reduced, the confinement potential is changed from a nonsquare profile to a square-well profile

Keywords

chemical interdiffusion; diffusion; optical fabrication; semiconductor device models; semiconductor quantum wells; semiconductor technology; SiO₂-AlGaAs; SiO₂-AlGaAs interface; confinement potential; lateral confinement energy; monotonic function; nonsquare profile; phenomenological equation; quantum wells; quantum-wire confinement potentials; quantum-wire fabrication; quantum-wire structures; separation distance; separation distances; square-well profile; strain; theoretical analysis; trench opening widths; vacancy diffusion; vacancy enhanced interdiffusion; vacancy-enhanced interdiffusion; Capacitive sensors; Carrier confinement; Equations; Fabrication; Microelectronics; Optoelectronic devices; Photonics; Potential well; Quantum mechanics; Strain control;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.720482

Filename

720482