Title :
Study of InGaAs-Channel MOSFETs for Analog/Mixed-Signal System-on-Chip Applications
Author :
Tewari, Suchismita ; Biswas, Abhijit ; Mallik, Abhijit
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
fDate :
3/1/2012 12:00:00 AM
Abstract :
MOSFETs with InGaAs in the channel show great promise for high-performance digital applications owing to enhanced electron mobility. In this letter, the analog performance is reported for the first time for an inversion-type enhancement-mode InGaAs-channel MOSFET. With the help of a device simulator, the device parameters for analog applications such as transconductance , transconductance-to-drain-current ratio , drain resistance , intrinsic gain, and unity-gain cutoff frequency are studied for such a device and compared with those for a similarly sized MOSFET. Our results show that InGaAs devices outperform their Si counterparts for analog applications.
Keywords :
III-V semiconductors; MOSFET; electron mobility; gallium arsenide; indium compounds; mixed analogue-digital integrated circuits; system-on-chip; InGaAs; InGaAs-channel MOSFET; analog application; analog-mixed-signal system-on-chip application; device parameter; device simulator; drain resistance; electron mobility; high-performance digital application; intrinsic gain; inversion-type enhancement-mode; transconductance-to-drain-current ratio; unity-gain cutoff frequency; Electron mobility; Indium gallium arsenide; Logic gates; MOSFET circuits; MOSFETs; Performance evaluation; Silicon; Device gain; InGaAs MOSFET; system on chip; transconductance; unity-gain cutoff frequency;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2182598
