Interdiffused quantum wells for lateral carrier confinement in VCSELs

Author

Naone, Ryan L. ; Floyd, Philip D. ; Young, D. Bruce ; Hegblom, Eric R. ; Strand, Timothy A. ; Coldren, Larry A.

Author_Institution

Dept. of Mater., California Univ., Santa Barbara, CA, USA

Volume

4

Issue

4

fYear

1998

Firstpage

706

Lastpage

714

Abstract

We show that it is necessary to eliminate carrier diffusion in the active region for viable vertical-cavity lasers (VCLs) with small dimensions. However, methods that work well in reducing lateral carrier leakage in narrow ridge-waveguide lasers such as silicon induced disordering may be problematic in VCL structures. Encouraging results from novel methods for impurity free intermixing for VCL applications are presented

Keywords

chemical interdiffusion; diffusion; laser cavity resonators; quantum well lasers; ridge waveguides; surface emitting lasers; waveguide lasers; VCL structures; VCSELs; active region; carrier diffusion; impurity free intermixing; interdiffused quantum wells; lateral carrier confinement; lateral carrier leakage; narrow ridge-waveguide lasers; silicon induced disordering; small dimensions; vertical-cavity lasers; Apertures; Carrier confinement; Laser modes; Optical losses; Optical scattering; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.720483

Filename

720483