Title :
Semiconductor lasers using diffused quantum-well structures
Author :
Yu, S.F. ; Li, E. Herbert
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
We assess the relative merits and prospects of using diffused quantum-well (QW) structures in semiconductor lasers. First, different techniques to achieve interdiffusion are analyzed and compared. Second, recent development of semiconductor lasers using interdiffusion technique is also discussed. Third, the optical properties of diffused QWs are studied. In addition, novel design of diffused QWs structures to maintain stable single-mode operation in semiconductor lasers is proposed. Finally, brief discussion and conclusion are given
Keywords :
chemical interdiffusion; diffusion; laser modes; laser stability; optical fabrication; quantum well lasers; semiconductor technology; diffused QW; diffused QW structures; diffused quantum-well structure semiconductor lasers; interdiffusion; interdiffusion technique; optical properties; stable single-mode laser operation; Laser theory; Laser transitions; Laser tuning; Optical device fabrication; Optical refraction; Optical variables control; Quantum well lasers; Refractive index; Semiconductor impurities; Semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.720485
