Electrical Properties of ITO/Crystalline-Silicon Contact at Different Deposition Temperatures

Author

De Cesare, Giampiero ; Caputo, Domenico ; Tucci, Mario

Author_Institution

Dept. of Electron. Eng., Univ. of Rome La Sapienza, Rome, Italy

Volume

33

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

327

Lastpage

329

Abstract

In this letter, the effect of deposition temperature on the barrier height between indium tin oxide (ITO) and crystalline silicon (c-Si) is presented. ITO films have been deposited by RF magnetron sputtering in the range between room temperature and 200 °C on both p- and n-type doped c-Si substrates. From current-voltage and capacitance-voltage characteristics of the ITO/c-Si junctions, we found that ITO deposited on 1-Ω · cm n-type doped silicon forms a rectifying junction with barrier heights varying from 0.9 to 0.3 eV, while at room temperature, an ohmic behavior on 1-Ω · cm p-type c-Si is obtained.

Keywords

elemental semiconductors; indium compounds; ohmic contacts; silicon; sputter deposition; tin compounds; ITO-Si; RF magnetron sputtering; Si; barrier height; capacitance-voltage characteristic; contact; current-voltage characteristic; deposition temperature; electrical property; electron volt energy 0.9 eV to 0.3 eV; film deposition; ohmic behavior; rectifying junction; temperature 200 degC; temperature 293 K to 298 K; Indium tin oxide; Junctions; Photovoltaic cells; Silicon; Substrates; Temperature; Temperature measurement; ITO/crystalline-silicon (c-Si) junctions; Indium tin oxide (ITO); semiconductor–metal interfaces; work function;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2180356

Filename

6142006