Small-Signal Response of Inversion Layers in High-Mobility $\hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As}$ MOSFETs Made With Thin High-

Ultrahigh-mobility compound semiconductor-based MOSFETs and quantum-well field-effect transistors could enable the next generation of logic transistors operating at low supply voltages since these materials exhibit excellent electron transport properties. While the long-channel In_0.53 Ga_0.47As MOSFETs exhibit promising characteristics with unpinned Fermi level at the InGaAs-dielectric interface, the high-field channel mobility as well as subthreshold characteristics needs further improvement. In this paper, we present a comprehensive equivalent circuit model that accurately evaluates the experimental small-signal response of inversion layers in In_0.53 Ga_0.47As MOSFETs fabricated with LaAlO₃ gate dielectric and enables accurate extraction of the interface state profile, the trap dynamics, and the effective channel mobility.