Colossal Lateral Photovoltaic Effect Observed in Metal-Oxide-Semiconductor Structure of $\\hbox {Ti/TiO}_{2}/\\hbox {Si}$

Author

Liu, S. ; Yu, C.Q. ; Wang, H.

Author_Institution

Dept. of Phys., Shanghai Jiao Tong Univ., Shanghai, China

Volume

33

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

414

Lastpage

416

Abstract

How to obtain a large sensitivity has been a central issue of lateral photovoltaic effects (LPEs) since it had been discovered many decades ago. This work reports a colossal LPE in a nanolayer Ti and TiO₂ modulated metal-oxide-semiconductor (MOS) structure of Ti/TiO₂/Si. The obtained 169 mV/mm sensitivity in this structure represents currently the highest level compared with previously reported results of 700 μV/mm-60 mV/mm in any other systems. The results indicate this MOS structure can be used as novel position-sensitive detectors with high sensitivity.

Keywords

MIS devices; sensitivity; silicon; titanium; titanium compounds; MOS structure; Ti-TiO₂-Si; colossal LPE; colossal lateral photovoltaic effect; lateral photovoltaic effects; metal-oxide-semiconductor structure; position-sensitive detectors; sensitivity; Detectors; Metals; Photovoltaic effects; Semiconductor device measurement; Semiconductor lasers; Sensitivity; Silicon; Heterojunctions; photodetectors; photovoltaic effects (LPEs); thin films;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2181325

Filename

6142009