100-GHz high-gain InP MMIC cascode amplifier

Author

Majidi-Ahy, Reza ; Nishimoto, Clifford ; Riaziat, Majid ; Glenn, Mike ; Silverman, Scott ; Weng, Shang-Lin ; Pao, Yi-Chin ; Zdasiuk, George ; Bandy, Steve ; Tan, Zoilo

Author_Institution

Varian Res. Center, Palo Alto, CA, USA

Volume

26

Issue

10

fYear

1991

fDate

10/1/1991 12:00:00 AM

Firstpage

1370

Lastpage

1378

Abstract

A high-gain InP monolithic millimeter-wave integrated circuit (MMIC) cascode amplifier has been developed which has 8.0 dB of average gain from 75 to 100 GHz when biased for maximum bandwidth, and more than 12 dB of gain at 80 GHz at the maximum-gain bias point, representing the highest gains reported to date, obtained from MMICs at W band (75-100 GHz). Lattice-matched InGaAs-InAlAs high-electron-mobility-transistors (HEMTs) with 0.1-μm gates were the active devices. A coplanar waveguide (CPW) was the transmission medium for this MMIC with an overall chip dimension of 600×500 μm

Keywords

III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 0.1 micron; 12.0 dB; 75 to 100 GHz; 8.0 dB; InGaAs-InAlAs; InP; MMIC cascode amplifier; W band; coplanar waveguide; high-electron-mobility-transistors; maximum bandwidth; maximum-gain bias point; transmission medium; Coplanar waveguides; Gain; Gallium arsenide; HEMTs; Indium phosphide; Integrated circuit technology; Large scale integration; MMICs; Millimeter wave integrated circuits; Millimeter wave technology;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.90088

Filename

90088