DocumentCode
1434328
Title
Efficiency Enhancement of Class-E Power Amplifiers at Low Drain Voltage
Author
You, Fei ; He, Songbai ; Tang, Xiaohong
Author_Institution
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Volume
58
Issue
4
fYear
2010
fDate
4/1/2010 12:00:00 AM
Firstpage
788
Lastpage
794
Abstract
In this paper, the output power, phase response, and drain efficiency of a class-E power amplifier with shunt capacitance, composed of nonlinear and linear capacitance, is analyzed to manifest the cause of efficiency degradation at low drain dc supply voltage (V dc). Analysis also shows that the drain efficiency at low V dc can be improved by reducing the on-duty ratio; a simple efficiency enhancement method with gate dc bias voltage adjustment is proposed. Numerical and simulated results are given in comparison to show the validity of the theoretical analysis and the proposed method. An experimental class-E amplifier, designed at 100 MHz, is measured; the drain efficiency declines by 14% at 0.8 V V dc compared to the highest efficiency. With the optimized gate dc bias voltage, the 7.5% drain efficiency improvements and 9.26-dB dynamic range extension are measured at low V dc in the experiment.
Keywords
VHF amplifiers; power MOSFET; power amplifiers; transmitters; MOSFET; class-E power amplifiers; drain efficiency; efficiency degradation; efficiency enhancement; frequency 100 MHz; low drain dc supply voltage; output power; phase response; shunt capacitance; voltage 0.8 V; Class-E power amplifier; MOSFET; efficiency enhancement; nonlinear output capacitance; polar transmitter;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2010.2041520
Filename
5427064
Link To Document