Title :
A capacitance model for GaAs MESFETs
Author :
Scheinberg, Norman ; Chisholm, Ellis
Author_Institution :
Anadigics Inc., Warren, NJ, USA
fDate :
10/1/1991 12:00:00 AM
Abstract :
A capacitance model for a GaAs MESFET suitable for implementation in the circuit analysis program SPICE is presented. The model consists of nonlinear capacitances that are a function of two voltages. Such a model gives rise to ordinary nonlinear capacitances and transcapacitances. The placement of these elements in the Y matrix is shown. The empirical equations for the gate charge of a GaAs MESFET given provide an accurate SPICE model for the gate charge and capacitances of a MESFET. A comparison of measured capacitance values with the modeled values gives close enough agreement for circuit simulation purposes
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; digital simulation; gallium arsenide; semiconductor device models; GaAs; MESFETs; SPICE; Y matrix; capacitance model; circuit analysis program; circuit simulation; gate charge; nonlinear capacitances; transcapacitances; Capacitance; Capacitors; Circuit analysis; Equations; FETs; Gallium arsenide; MESFETs; SPICE; Solid modeling; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
