Title :
AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors
Author :
McFarlane, Brian R. ; Kurahashi, Peter ; Heineck, Daniel P. ; Presley, Rick E. ; Sundholm, Eric ; Wager, John F.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
fDate :
4/1/2010 12:00:00 AM
Abstract :
Two circuits to accomplish ac/dc rectification using thin-film transistors (TFTs) based on amorphous oxide semiconductors are presented. The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the second uses a cross-tied configuration to increase the output voltage. With an input of 7.07 V rms at a frequency of 1 MHz, output voltages of ~ 9 and ~ 10.5 V, respectively, are observed. With a channel length of 15 ??m, successful operation up to 20 MHz is demonstrated.
Keywords :
amorphous semiconductors; indium compounds; rectification; thin film transistors; zinc compounds; AC/DC rectification; amorphous oxide semiconductors; channel layer material; cross-tied configuration; frequency 1 MHz; full-bridge configuration; indium gallium oxide thin-film transistors; size 15 mum; voltage 10.5 V; voltage 7.07 V; voltage 9 V; zinc tin oxide; Amorphous semiconductors; rectifiers; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2042424
