AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors

Author

McFarlane, Brian R. ; Kurahashi, Peter ; Heineck, Daniel P. ; Presley, Rick E. ; Sundholm, Eric ; Wager, John F.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA

Volume

31

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

314

Lastpage

316

Abstract

Two circuits to accomplish ac/dc rectification using thin-film transistors (TFTs) based on amorphous oxide semiconductors are presented. The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the second uses a cross-tied configuration to increase the output voltage. With an input of 7.07 V _rms at a frequency of 1 MHz, output voltages of ~ 9 and ~ 10.5 V, respectively, are observed. With a channel length of 15 ??m, successful operation up to 20 MHz is demonstrated.

Keywords

amorphous semiconductors; indium compounds; rectification; thin film transistors; zinc compounds; AC/DC rectification; amorphous oxide semiconductors; channel layer material; cross-tied configuration; frequency 1 MHz; full-bridge configuration; indium gallium oxide thin-film transistors; size 15 mum; voltage 10.5 V; voltage 7.07 V; voltage 9 V; zinc tin oxide; Amorphous semiconductors; rectifiers; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2042424

Filename

5427076