Title :
A Broadband High Efficiency High Output Power Frequency Doubler
Author :
Chang, Hong-Yeh ; Chen, Guan-Yu ; Hsin, Yue-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fDate :
4/1/2010 12:00:00 AM
Abstract :
An 8 to 30 GHz broadband high efficiency, high output power frequency doubler using 0.5 ??m AlGaAs/InGaAs enhancement-mode pseudomorphic high electronic mobility transistor process is presented in this paper. A common-gate/common-source field effect transistor pair is employed in the balanced doubler. With an input power of 8 dBm, this work features a conversion gain of better than -4 dB with a fundamental rejection of better than 13 dB over the operation bandwidth. The output 1 dB compression point (P1B) and the saturation output power (Psat) are higher than 7.3 and 10 dBm, respectively. This work presents the highest figure-of-merit (FOM) of 25.14 as compared to other previously reported broadband doublers.
Keywords :
III-V semiconductors; aluminium compounds; broadband networks; frequency multipliers; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; AlGaAs-InGaAs; broadband high efficiency-high output power frequency doubler; common-gate-common-source field effect transistor; compression point; enhancement-mode pseudomorphic high electronic mobility transistor process; figure-of-merit; frequency 8 GHz to 30 GHz; saturation output power; size 0.5 mum; Broadband; PHEMT; distributed; enhancement-mode (E-Mode); frequency doubler;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2042560