Title :
Radiation effects on microelectronics in space
Author :
Srour, Joseph R. ; McGarrity, James M.
Author_Institution :
Northrop Res. & Technol. Center, Palos Verdes Peninsula, CA, USA
fDate :
11/1/1988 12:00:00 AM
Abstract :
The basic mechanisms of space radiation effects on microelectronics are reviewed. Topics discussed include the effects of displacement damage and ionizing radiation on devices and circuits, single-event phenomena, dose enhancement, radiation effects on optoelectronic devices and passive components, hardening approaches, and simulation of the space radiation environment. A summary of damage mechanisms that can cause temporary or permanent failure of devices and circuits operating in space is presented
Keywords :
failure analysis; integrated circuit technology; radiation effects; radiation hardening (electronics); semiconductor technology; basic mechanisms; circuits; damage mechanisms; devices; dose enhancement; effects of displacement damage; hardening approaches; ionizing radiation; microelectronics; optoelectronic devices; passive components; permanent failure of devices; simulation; single-event phenomena; space radiation effects; space radiation environment; temporary failure of devices; Atomic measurements; Circuit simulation; Circuit testing; Discrete event simulation; Extraterrestrial phenomena; Ionizing radiation; Microelectronics; Optoelectronic devices; Radiation effects; Radiation hardening;
Journal_Title :
Proceedings of the IEEE
