Highly Reliable High-Speed 1.1- $\mu$ m-Range VCSELs With InGaAs/GaAsP-MQWs

In this paper, we describe high-speed 1.1-μm-range oxide-confined vertical-cavity surface-emitting lasers (VCSELs) for large-scale optical interconnection applications. For achieving high data rates up to 25 Gbit/s under high temperature, we applied InGaAs/GaAsP strain-compensated multiple quantum wells (SC-MQWs) as the active layer. The developed device showed 25 Gbit/s error-free operation at 100°C. We also examined reliability of the VCSELs through accelerated life tests. The result showed an extremely long lifetime of about 10 thousand hours in MTTF under an ambient temperature of 150°C and a current density of about 19 kA/cm². The level of reliability either equaled or surpassed that of conventional 0.85-μm VCSELs. Moreover, we revealed a typical failure mode of the device, which was caused by ≪110≫ dark line defects (DLDs) generated in the n-DBR layers under the current aperture area.