Title :
Physical basis for high-power semiconductor nanosecond opening switches
Author :
Grekhov, Igor V. ; Mesyats, Gennady A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
10/1/2000 12:00:00 AM
Abstract :
The physical basis for semiconductor nanosecond opening switches is a specially organized recovery process in the diode. There are two modes of this process: junction recovery (JR) mode and silicon opening switch (SOS) mode. In the JR mode, the current interruption occurs due to the recovery of pn-junction blocking capability, and in the SOS mode, due to the drastic increase in resistance of low-doped part of p-layer, where reverse current density exceeds the saturated value jr>qNdVs. JR mode is preferable for generators with a pulse rise-time of 0.5-3 ns and a pulse of power of less than 50-80 MW, and SOS mode at pulse rise-time of more than 5 ns for any pulse power and at any pulse rise-time if power is higher than 100 MW
Keywords :
current density; p-n junctions; power semiconductor switches; pulsed power switches; 0.5 to 3 ns; 100 MW; 5 ns; 50 to 80 MW; current interruption; high-power semiconductor nanosecond opening switches; junction recovery mode; low-doped part; p-layer; physical basis; pn-junction blocking capability; power pulse; pulse generation; pulse rise-time; pulsed power system; recovery process; resistance; reverse current density; silicon opening switch mode; Current density; Immune system; Industrial power systems; Plasma applications; Power generation; Power semiconductor switches; Pulse generation; Pulse power systems; Semiconductor diodes; Silicon;
Journal_Title :
Plasma Science, IEEE Transactions on
