A semianalytical parameter-extraction procedure for HBT equivalent circuit

Author

Li, Bin ; Prasad, Sheila ; Li-Wu Yang ; Wang, S.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

Volume

46

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

1427

Lastpage

1435

Abstract

A parameter-extraction approach for the heterojunction bipolar transistor (HBT), which combines the analytical approach and empirical optimization procedure, is developed. The extraction techniques for extrinsic base-collector capacitance and pad parasitics are also included in this approach. The cutoff operation of the HBT´s is utilized to extract the values of the pad capacitances. An excellent fit between measured and simulated S-parameters in the frequency range of 50 MHz-36 GHz is obtained over a wide range of bias points

Keywords

S-parameters; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; optimisation; semiconductor device models; 50 MHz to 36 GHz; HBT; S-parameters; equivalent circuit; extrinsic base-collector capacitance; heterojunction bipolar transistor; optimization; pad parasitics; semianalytical parameter extraction; Bipolar transistors; Circuit testing; Data mining; Design optimization; Equivalent circuits; Frequency dependence; Frequency measurement; Heterojunction bipolar transistors; Parameter extraction; Parasitic capacitance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.721144

Filename

721144