Title :
Thin-film deposition of (BaxSr1-x)TiO3 by pulsed ion beam evaporation
Author :
Sonegawa, Tomihiro ; Ohtomo, Katsuhiko ; Jiang, Weihua ; Yatsui, Kiyoshi
Author_Institution :
Dept. of Electron. & Electr. Eng., Ryukyus Univ., Okinawa, Japan
fDate :
10/1/2000 12:00:00 AM
Abstract :
An ablation plasma generated by intense, pulsed ion beam was used for thin-film deposition of commercially interesting material (Bax ,Sr1-x)TiO3 (0<x<1). The deposition has been carried out in vacuum and on the substrate at the room temperature. The deposited thin films were analyzed by using Rutherford backward scattering, X-ray photoelectron spectroscopy, atomic force microscope and scanning electron microscopy. It has been understood that the film deposition rate was ~20 nm/shot and the thin film had the same composition as the target. Maximum dielectric constant was obtained at x=0.5
Keywords :
Rutherford backscattering; X-ray photoelectron spectra; atomic force microscopy; barium compounds; dielectric thin films; evaporation; ion beam assisted deposition; plasma deposited coatings; scanning electron microscopy; strontium compounds; vacuum deposited coatings; (Bax,Sr1-x)TiO3; (BaxSr1-x)TiO3; BaSrTiO3; BaTiO3; Rutherford backward scattering; SrTiO3; X-ray photoelectron spectroscopy; ablation plasma; atomic force microscope; dielectric constant; dielectric thin films; film deposition rate; plasma deposited thin films; pulsed ion beam; pulsed ion beam evaporation; room temperature; scanning electron microscopy; thin film deposition; vacuum; Atomic force microscopy; Dielectric thin films; Ion beams; Photoelectron microscopy; Plasma applications; Plasma materials processing; Plasma temperature; Pulse generation; Scanning electron microscopy; Sputtering;
Journal_Title :
Plasma Science, IEEE Transactions on
