Title :
Author :
Weng, W.Y. ; Hsueh, T.J. ; Chang, S.J. ; Huang, G.J. ; Hsueh, H.T.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
4/1/2011 12:00:00 AM
Abstract :
The authors report the formation of β-Ga2O3/GaN heterostructure and the fabrication of a β-Ga2O3/GaN bilayer photodetector (PD). It was found that we could control the depletion depth of the device and thus switch the operation mode between solar-blind and visible-blind by simply changing the applied bias. It was also found that we could achieve a deep-ultraviolet (UV) to near-UV contrast ratio of 200 when the device was biased at -1 V. Furthermore, it was found that near-UV to visible contrast ratio of the fabricated β-Ga2O3/GaN PD was 260 when biased at -10 V.
Keywords :
III-V semiconductors; Schottky barriers; gallium compounds; photodetectors; wide band gap semiconductors; Ga2O3-GaN; Schottky barrier photodetector; bilayer photodetector; solar blind operation; visible blind operation; $betahbox{-}hbox{Ga}_{2}hbox{O}_{3}$; GaN; dual-band; ultraviolet (UV) photodetector;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2108276