Ka-band and MMIC pHEMT-based VCO´s with low phase-noise properties

Author

Garner, Peter J. ; Howes, Michael J. ; Snowden, Christopher M.

Author_Institution

Inst. of Microwaves & Photonics, Leeds Univ., UK

Volume

46

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

1531

Lastpage

1536

Abstract

Two pseudomorphic high electron-mobility transistor (pHEMT)-based Ka-band voltage-controlled oscillators (VCO´s), which have exhibited novel close-to-carrier phase-noise properties in conjunction with output powers greater than previously reported heterojunction bipolar transistor (HBT) based oscillators, are presented in this paper. Good low phase noises of at least -70 and -75 dBc/Hz at an offset of 100 kHz around 38 GHz have been measured for the two different VCO designs over reasonable frequency tuning ranges with flat or linear output-power tuning in these ranges. Both designs show a strong dependence between phase noise and tuning-element bias conditions

Keywords

HEMT integrated circuits; MMIC oscillators; circuit tuning; integrated circuit noise; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 38 GHz; Ka-band; MMIC; close-to-carrier phase-noise; frequency tuning ranges; linear output-power tuning; low phase-noise properties; output powers; pHEMT-based VCO; tuning-element bias conditions; Frequency measurement; Heterojunction bipolar transistors; MMICs; Noise measurement; PHEMTs; Phase measurement; Phase noise; Power generation; Tuning; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.721161

Filename

721161