Title :
High-efficiency Ku-band oscillators
Author :
McSpadden, James O. ; Fan, Lu X. ; Chang, Kai
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
fDate :
10/1/1998 12:00:00 AM
Abstract :
Ku-band oscillators have been experimentally found to have a high dc-to-radio-frequency (RF) efficiency. Using a packaged pseudomorphic high electron-mobility transistor (pHEMT) device, a maximum efficiency of 60% was measured at 14.5 and 15 GHz with output powers of 16 and 23 mW, respectively. Oscillator circuits also revealed efficiencies of 48% at 16 GHz and 41% at 17.1 GHz with RF output power levels of 11 and 13 mW, respectively
Keywords :
HEMT integrated circuits; MMIC oscillators; S-parameters; semiconductor device models; 11 to 23 mW; 14.5 to 17.1 GHz; 41 to 60 percent; Ku-band; RF output power levels; dc-to-radio-frequency efficiency; maximum efficiency; pHEMT oscillators; MESFETs; Microwave amplifiers; Microwave devices; Microwave oscillators; Microwave transistors; PHEMTs; Power amplifiers; Power generation; Radio frequency; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
