GaAs HEMT monolithic voltage-controlled oscillators at 20 and 30 GHz incorporating Schottky-varactor frequency tuning

Author

Sevimli, Oya ; Archer, John W. ; Griffiths, Grant J.

Author_Institution

Telecommun. & Ind. Phys., CSIRO, Marsfield, NSW, Australia

Volume

46

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

1572

Lastpage

1576

Abstract

This paper describes the design and fabrication of fully monolithic voltage-controlled oscillator (VCO) circuits using a combined GaAs high electron-mobility transistor (HEMT) and Schottky-varactor diode process. To the authors´ knowledge, this is the first time a process of this type has been used for VCO fabrication. Three VCO designs with similar circuit topology, but two different operating frequencies and resonator types, were investigated to compare their relative performance. Two approaches to the integrated resonator were tried: coupled and single microstrip lines. The single resonator approach resulted in better power efficiency, while the coupled resonator was found to provide a wider frequency tuning range and lower phase noise

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC oscillators; Schottky diodes; circuit tuning; gallium arsenide; integrated circuit noise; microstrip resonators; phase noise; varactors; voltage-controlled oscillators; 20 GHz; 30 GHz; GaAs; HEMT ICs; MMIC oscillators; Schottky-varactor diode process; circuit topology; coupled lines; frequency tuning range; integrated resonator; operating frequencies; phase noise; power efficiency; resonator types; single microstrip lines; voltage-controlled oscillators; Circuit topology; Coupling circuits; Fabrication; Gallium arsenide; HEMTs; MODFETs; Microstrip resonators; Resonant frequency; Schottky diodes; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.721167

Filename

721167