The electrical properties and device applications of homoepitaxial and polycrystalline diamond films

Author

Gildenblat, Gennady Sh ; Grot, Stephen A. ; Badzian, Andrzej

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

Volume

79

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

647

Lastpage

668

Abstract

Electronic applications of semiconductor diamonds are addressed. Doping and electrical properties of these films, formation of low-resistive `ohmic´ contacts, surface modification methods, and experimental device applications are discussed. Of particular interest are high-temperature (300°C) MOSFETs and metal contacts to CVD (chemical vapor deposition) diamond films which were used to fabricate high-temperature (580°C) Schottky diodes, rudimentary MESFETs, and blue light-emitting diodes (LEDs). The status of the emerging technology is reviewed with an emphasis on the areas of current research activity

Keywords

CVD coatings; Schottky gate field effect transistors; Schottky-barrier diodes; diamond; elemental semiconductors; insulated gate field effect transistors; light emitting diodes; semiconductor thin films; 300 degC; 580 degC; CVD; MESFETs; MOSFETs; Schottky diodes; device applications; doping; electrical properties; homoepitaxial diamond film; light-emitting diodes; ohmic contacts; polycrystalline diamond films; semiconductor diamonds; surface modification; Contacts; Crystalline materials; Electric breakdown; Nuclear electronics; Schottky diodes; Semiconductor device doping; Semiconductor films; Semiconductor materials; Space vehicles; Temperature sensors;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.90130

Filename

90130