Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
Abstract :
The author reviews some of the device properties of diamonds, as well as recently developed diamond device fabrication techniques for high-frequency, high-power transistors. Two advantages of diamond over other semiconductors used for high-frequency, high power devices are its high thermal conductivity and high electric-field breakdown. Homoepitaxial diamond has been grown by both plasma and hot-filament techniques. The device properties of homoepitaxial diamond produced by the hot-filament technique are reviewed. Much of the development necessary for the production of diamond devices already exists. Doping by homoepitaxy, diamond etching, device quality SiO2-diamond interface, and ohmic contact technology are reviewed. The remaining problems are the development of large area single crystal diamond substrates, improvement of doping techniques, and refinement in ohmic contact technology
Keywords :
diamond; field effect transistors; ohmic contacts; power transistors; semiconductor technology; FET; device properties; diamond device fabrication techniques; doping techniques; electric-field breakdown; etching; high-power transistors; homoepitaxial diamond; hot-filament techniques; ohmic contact technology; substrates; thermal conductivity; Doping; Electric breakdown; Fabrication; Ohmic contacts; Plasma applications; Plasma devices; Plasma properties; Production; Semiconductor device breakdown; Thermal conductivity;
