Title :
Current memory based differentiator with protection of storage node
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
fDate :
10/1/1998 12:00:00 AM
Abstract :
A time-domain differentiator based on current memory is presented. To ensure processing accuracy, an MOS charge divider is used to reduce the effect of charge injection and a well (n or p type) is used to protect the storage device from minority carrier diffusion in the substrate. The circuit operates at low current levels. A single-poly CMOS technology can be used for circuit implementation
Keywords :
CMOS analogue integrated circuits; analogue storage; differentiating circuits; dividing circuits; MOS charge divider; current memory; minority carrier diffusion; processing accuracy; single-poly CMOS technology; storage device; time-domain differentiator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981374
