DocumentCode :
14357
Title :
The Effect of Cu CMP Pad Clean on Defectivity and Reliability
Author :
Leong Lup San ; Lin Benfu ; Yu Hong ; Zhu Yue Qin ; Lu Wei ; Wong, Lydia Helena ; Mishra, Anadi
Author_Institution :
Global Foundries Singapore Pte Ltd., Singapore, Singapore
Volume :
26
Issue :
3
fYear :
2013
fDate :
Aug. 2013
Firstpage :
344
Lastpage :
349
Abstract :
A type of CMP scratches with an embedded particle and a comet-like tail has been studied. The nature of the embedded particle was found to be silica which suggested that the source came from barrier metal polishing step. The inclusion of a pad-cleaning step during barrier polishing was found to reduce the defect significantly. This pad cleaning step reduce hydrophobicity of the polishing pad. Through a series of experiments, it was found that BTA was the cause of high hydrophobicity build up on during barrier polish and a defect mechanism was proposed. In addition, pad cleaning has positive impact on TDDB. The reason for the the reliability improvement was believed to be due to formation of divots at the side of the trench which, after deposition of a capping nitride layer, will increase resistance for Cu migration during voltage cycle.
Keywords :
chemical mechanical polishing; copper; electromigration; hydrophobicity; surface cleaning; CMP pad clean; CMP scratches; Cu; barrier metal polishing step; barrier polishing; capping nitride layer; comet-like tail; defect mechanism; embedded particle; hydrophobicity; inclusion; pad-cleaning step; polishing pad; reliability improvement; voltage cycle; Chemical mechanical polish; defects; pad clean; reliability;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2013.2271385
Filename :
6548095
Link To Document :
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