Title :
Double-fused 1.5 μm vertical cavity lasers with record high T o of 132 K at room temperature [Al(Ga)As/GaAs]
Author :
Black, K.A. ; Abraham, Pierre ; Margalit, N.M. ; Hegblom, E.R. ; Chiu, Yi-Jen ; Piprek, Joachim ; Bowers, John E. ; Hu, E.L.
Author_Institution :
Dept. of Mater., California Univ., Santa Barbara, CA
fDate :
10/1/1998 12:00:00 AM
Abstract :
The authors report record high temperature performance of a novel long wavelength vertical cavity laser using an electron barrier, operating continuous-wave up to 71°C. A record high characteristic temperature (To) of 132 K has been measured over an operating range of -75 to 35°C
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical fibre communication; optical transmitters; semiconductor lasers; surface emitting lasers; -75 to 35 degC; 1.5 micrometre; 132 K; Al(Ga)As-GaAs; characteristic temperature; continuous-wave operation; double-fused vertical cavity lasers; electron barrier; high temperature performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981344
