Title :
16-pixel linear array of near-infrared photodetectors in polycrystalline Ge on Si
Author :
Colace, L. ; Masini, G. ; Galluzzi, F. ; Assanto, G.
Author_Institution :
Dept. of Electron. Eng., Terza Univ. of Rome, Italy
fDate :
10/1/1998 12:00:00 AM
Abstract :
A novel one-dimensional array of photodetectors for the near infrared up to 1.55 μm is reported. The device is based on polycrystalline Ge thermally evaporated on silicon, and consists of 16 pixels at a 100 μm pitch. A responsivity of 16 mA/W was measured at 1.3 μm with nanosecond response time
Keywords :
elemental semiconductors; germanium; photodetectors; vacuum deposited coatings; 1.3 to 1.55 micron; 16 pixel; Ge-Si; Si substrate; linear array; near-infrared photodetector; one-dimensional array; polycrystalline Ge; thermally evaporated film;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981361
