Title :
Stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy
Author :
Herzog, W.D. ; Goldberg, B.B. ; Ünlü, M.S. ; Singh, R. ; Dabkowski, F.P.
Author_Institution :
Dept. of Phys., Boston Univ., MA, USA
fDate :
10/1/1998 12:00:00 AM
Abstract :
The authors report room temperature stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy. The threshold for bulk stimulated emission was found to be 3.4 MW/cm2 with an emission linewidth of 1.2 nm
Keywords :
III-V semiconductors; gallium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; stimulated emission; vapour phase epitaxial growth; GaN; III-V nitride system; as-grown hexagons; bulk stimulated emission; emission linewidth; hydride vapour phase epitaxy; selective area growth; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981382
