Title :
Impact of subchannel design on DC and RF performance of 0.1 μm MODFETs with InAs-inserted channel
Author :
Xu, D. ; Osaka, J. ; Suemitsu, T. ; Umeda, Y. ; Yamane, Y. ; Ishii, Y.
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa, Japan
fDate :
10/1/1998 12:00:00 AM
Abstract :
It is shown that a further performance improvement in MODFETs with InAs-inserted channel structures can be achieved by properly designing the subchannel layer that lies directly under the main channel of the InAs layer. The use of an In0.30Ga0.70As layer grown with tensile strain on the InP substrate contributes to better accommodation of the 2D electron gas in the InAs layer. This translates to a >10% increase in the maximum extrinsic transconductance and an 8% increase in the current gain cutoff frequency of a 0.1 μm device
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; two-dimensional electron gas; 0.1 micron; 2D electron gas; DC performance; In0.30Ga0.70As; In0.30Ga0.70As layer; InAs; InAs inserted channel; InP; InP substrate; MODFET; RF performance; current gain cutoff frequency; subchannel design; tensile strain; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981231
