Title :
Carrier wave in n type gallium arsenide under crossed d.c. electric and magnetic fields
Author :
Hashizume, N. ; Kataoka, S.
Author_Institution :
Ministry of International Trade and Industry, Electrotechnical Laboratory, Tanashi, Japan
fDate :
5/1/1972 12:00:00 AM
Abstract :
Assuming that current-density/electric-field curves are provided and that the Hall mobility does not change appreciably with the electric field, the small-signal tensor conductivity of n-GaAs in the presence of d.c. electric and magnetic fields is derived. Using this tensor conductivity, carrier-wave equations are solved for a long slab of n-GaAs sandwiched between dielectrics. It is found that wave vectors are generally skewed against the direction of the direct current. The gain factor of the propagation coefficient is found to be controllable by the magnetic field, especially when the slab is thin and the d.c. electric field is near the threshold value.
Keywords :
III-V semiconductors; electric field effects; electrical conductivity of solids; electromagnetic wave propagation; electron mobility; gallium arsenide; magnetic field effects; semiconductor materials; GaAs; Hall mobility; conductivity; electric field effects; electromagnetic wave propagation; electron mobility; gain factor; magnetic field effects; magnetoresistance effect; n-type; travelling space charge amplifier;
Journal_Title :
Electrical Engineers, Proceedings of the Institution of
DOI :
10.1049/piee.1972.0109