Radiation hardness of static random-access-memory tested using dose-to-failure and gamma-ray exposure

Author

Chang-Liao, Kuei-Shu ; Feng, Kuang-Hsien

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

47

Issue

2

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

155

Lastpage

158

Abstract

A dose-to-failure, which is extracted by measuring the number of error bytes as a function of dose, is proposed and then demonstrated to be an ideal parameter for radiation-hardness test of a static random-access-memory (SRAM). The radiation exposure is performed using the Co-60 gamma ray. The test conditions of dose rate, power-supply voltage, and temperature must be specified. The possible mechanisms for the changes of radiation hardness at various test conditions are explained. The radiation hardness tests of SRAM are useful for the practical assessment of integrated circuit (IC) reliability

Keywords

SRAM chips; gamma-ray effects; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); Co-60 gamma ray; SRAM; dose-to-failure; gamma-ray exposure; integrated circuit reliability; power-supply voltage; radiation hardness; radiation-hardness test; static random-access-memory; temperature; Application specific integrated circuits; Circuit testing; Integrated circuit testing; Performance evaluation; Power supplies; Random access memory; Read-write memory; Temperature; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Reliability, IEEE Transactions on

Publisher

ieee

ISSN

0018-9529

Type

jour

DOI

10.1109/24.722280

Filename

722280