Broadband Time-Domain Measurement System for the Characterization of Nonlinear Microwave Devices With Memory

This paper describes a novel fully calibrated four channel broadband time-domain measurement system for the characterization of nonlinear microwave devices with memory. The hardware architecture of the proposed time-domain measurement system is based on a wideband sub-sampling principle. The sampling heads work at a high strobe signal repetition frequency that can be tuned between 357-536 MHz. We achieve a 40-GHz RF frequency bandwidth and a 160-MHz IF bandwidth. This instrument enables the measurement of carrier and envelope waveforms at both ports of nonlinear microwave devices driven by broadband modulated multicarriers. The test-bench is applied to the cross modulation characterization of a 15-W GaN HEMT CREE S-band power amplifier with memory due to different biasing circuit configurations. The amplifier under test is driven by the sum of a large-signal modulated carrier (double-sideband amplitude modulation at 3.6 GHz) and a small single-tone signal at a 110-MHz offset frequency. Our significant contribution comes from the capability of the measurement system to record the time-domain waveforms of several nonadjacent modulated signals on a similar time equivalent scale for different cases of memory effects of the power amplifier under test.