Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection

Author

Foxe, Michael ; Lopez, Gabriel ; Childres, Isaac ; Jalilian, Romaneh ; Patil, Amol ; Roecker, Caleb ; Boguski, John ; Jovanovic, Igor ; Chen, Yong P.

Author_Institution

Dept. of Mech. & Nucl. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

11

Issue

3

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

581

Lastpage

587

Abstract

The use of a graphene field-effect transistors (GFETs) to detect radiation is proposed and analyzed. The detection mechanism used in the proposed detector architecture is based on the high sensitivity of graphene to the local change of electric field that can result from the interaction of radiation with a gated undoped semiconductor absorber (substrate) in a GFET. We have modeled a GFET-based radiation detector, and discussed its anticipated performance and potential advantages compared to conventional detector architectures.

Keywords

elemental semiconductors; field effect transistors; graphene; particle detectors; radiation effects; C; GFET-based radiation detector; conventional detector architectures; electric field; gated undoped semiconductor absorber; graphene field effect transistors; radiation detection; radiation interaction; undoped semiconductor substrates; Buffer layers; Educational institutions; Electrical resistance measurement; Ionization; Logic gates; Resistance; Silicon; FET; graphene; graphene devices; semiconductor radiation detectors;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2012.2186312

Filename

6144014