Title :
Room-temperature continuous wave operation of all-AlGaAs visible (~700 nm) vertical-cavity surface emitting lasers
Author :
Hou, H.Q. ; Crawford, M. Hagerott ; Hickman, R.J. ; Hammons, B.E.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
10/10/1996 12:00:00 AM
Abstract :
The authors present the first demonstration of the room-temperature continuous-wave operation of AlGaAs quantum well red (~700 nm) vertical-cavity surface emitting lasers fabricated by the selective oxidation process. The threshold current is ~3.2 mA with an output power of up to 44 μW. The laser structures, containing five Al 0.24Ga0.76As quantum wells, were grown on GaAs (311)A substrates by metal organic vapour phase epitaxy
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; 3.2 mA; 44 muW; 700 nm; Al0.24Ga0.76As; GaAs; GaAs (311)A substrates; MOVPE; continuous-wave operation; metal organic VPE; quantum well red VCSEL; room-temperature CW operation; selective oxidation process; semiconductor laser; surface emitting lasers; vapour phase epitaxy; vertical-cavity SEL; visible MQW laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961337
