• DocumentCode
    1437064
  • Title

    Nanoelectromechanical Memory Cell (T Cell) for Low-Cost Embedded Nonvolatile Memory Applications

  • Author

    Lee, Kwangseok ; Choi, Woo Young

  • Author_Institution
    Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
  • Volume
    58
  • Issue
    4
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    1264
  • Lastpage
    1267
  • Abstract
    A novel nanoelectromechanical memory cell (T cell) design has been proposed and successfully demonstrated by simulation and experimental results of its prototype cell. The T-cell structure has a simpler fabrication process than the previously reported H cell because the T cell needs only two metal line layers. The T cell can be used for low-cost embedded nonvolatile memory applications.
  • Keywords
    digital storage; nanoelectromechanical devices; nanofabrication; T-cell; fabrication process; low-cost embedded nonvolatile memory application; metal line layer; nanoelectromechanical memory cell; prototype cell; Multibit operation; T cell; nanoelectromechanical (NEM) memory; nonvolatile memory; simple fabrication;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2010.2104154
  • Filename
    5703120