Title :
55.0 Gbit/s/cm data bandwidth density interface in 0.5 μm CMOS for advanced parallel optical interconnects
Author :
Madhavan, B. ; Levi, A.F.J.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA
fDate :
9/17/1998 12:00:00 AM
Abstract :
The authors demonstrate that low cost 0.5 μm CMOS technology may be used to form a bridge between a slow parallel electrical interface and a very high-speed parallel optical interface. The 1 cm wide integrated circuit produced has a bisection data bandwidth of 55 Gbit/s and dissipates 5.7 W
Keywords :
CMOS integrated circuits; integrated optoelectronics; optical interconnections; 0.5 micron; 1 cm; 5.7 W; CMOS technology; advanced parallel optical interconnects; bisection data bandwidth; data bandwidth density interface; slow parallel electrical interface;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981331
