Title :
Low-threshold 650 nm band S3 laser diodes using tensile strained GaInAsP/AlGaInP MQW
Author :
Okada, N. ; Anayama, C. ; Sugiura, K. ; Sekiguchi, H. ; Furuya, A. ; Tanahashi, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
9/17/1998 12:00:00 AM
Abstract :
650 nm band tensile strained GaInAsP/AlGaInP MQW laser diodes (LDs) were fabricated for the first time. It was found that, compared with compressive strained GaInP MQW LDs, tensile strained GaInAsP MQW LDs have the advantage of low-threshold currents. Threshold currents (4.5 mA at 20°C, 7.9 mA at 60°C), which are the lowest yet reported for 650 nm band edge emitting lasers, were demonstrated using a self-aligned stepped substrate (S3) laser structure
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 20 degC; 4.5 mA; 60 degC; 650 nm; 7.9 mA; GaInAsP-AlGaInP; III-V semiconductors; edge emitting lasers; low-threshold laser diodes; self-aligned stepped substrate; tensile strained MQW;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981325
