• DocumentCode
    1437139
  • Title

    Low-threshold 650 nm band S3 laser diodes using tensile strained GaInAsP/AlGaInP MQW

  • Author

    Okada, N. ; Anayama, C. ; Sugiura, K. ; Sekiguchi, H. ; Furuya, A. ; Tanahashi, T.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    34
  • Issue
    19
  • fYear
    1998
  • fDate
    9/17/1998 12:00:00 AM
  • Firstpage
    1855
  • Lastpage
    1856
  • Abstract
    650 nm band tensile strained GaInAsP/AlGaInP MQW laser diodes (LDs) were fabricated for the first time. It was found that, compared with compressive strained GaInP MQW LDs, tensile strained GaInAsP MQW LDs have the advantage of low-threshold currents. Threshold currents (4.5 mA at 20°C, 7.9 mA at 60°C), which are the lowest yet reported for 650 nm band edge emitting lasers, were demonstrated using a self-aligned stepped substrate (S3) laser structure
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 20 degC; 4.5 mA; 60 degC; 650 nm; 7.9 mA; GaInAsP-AlGaInP; III-V semiconductors; edge emitting lasers; low-threshold laser diodes; self-aligned stepped substrate; tensile strained MQW;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981325
  • Filename
    722387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1437139