Title :
High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors
Author :
Duez, V. ; Mélique, X. ; Vanvesien, O. ; Mounaix, P. ; Mollot, F. ; Lippens, D.
Author_Institution :
IEMN, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
fDate :
9/17/1998 12:00:00 AM
Abstract :
The authors report a very high capacitance ratio of ~10:1:1 for a heterostructure varactor. To realise this, a new InGaAs/AlAs quantum well-barrier scheme has been fabricated in GaAs technology. The capacitance modulation involves carrier dynamics via the quantum well eigenstates in contrast to the conventional depletion operation mode
Keywords :
III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; indium compounds; semiconductor quantum wells; varactors; GaAs-InGaAs-AlAs; III-V semiconductors; capacitance modulation; capacitance ratio; carrier dynamics; depletion operation mode; quantum well eigenstates; quantum well-barrier varactors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981328
