DocumentCode
1437290
Title
Correlation between high-voltage kink and substrate current in GaAs MESFETs
Author
Chan, Y.-J. ; Huang, J.W.
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Volume
34
Issue
19
fYear
1998
fDate
9/17/1998 12:00:00 AM
Firstpage
1884
Lastpage
1885
Abstract
The kink effect in GaAs MESFETs has been studied by evaluating ungated substrate current. Through the investigations of different buffer structures and epi-ready wafers from vendors, the authors found that kinks appearing in the high-voltage regime are related to the interface states, which may be associated with the residual impurities in the epi-ready wafers
Keywords
gallium arsenide; GaAs; GaAs MESFETs; HV kink; buffer structures; epi-ready wafers; high-voltage kink; interface states; residual impurities; substrate current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981294
Filename
722408
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