• DocumentCode
    1437299
  • Title

    Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures

  • Author

    Tews, H. ; Averbeck, R. ; Graber, A. ; Riechert, H.

  • Author_Institution
    Central Res. Labs., Siemens AG, Munich, Germany
  • Volume
    32
  • Issue
    21
  • fYear
    1996
  • fDate
    10/10/1996 12:00:00 AM
  • Firstpage
    2004
  • Lastpage
    2006
  • Abstract
    Blue and green electroluminescence from GaN/InGaN p-n junctions is reported. The layer sequences were grown by molecular beam epitaxy on sapphire substrates. Room temperature electroluminescence was recorded at 470 nm (blue) and 513 nm (green) wavelengths
  • Keywords
    III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; p-n heterojunctions; photoluminescence; semiconductor growth; 470 nm; 513 nm; Al2O3; GaN-InGaN; MBE grown GaN/InGaN heterostructures; blue electroluminescence; green electroluminescence; molecular beam epitaxy; p-n junctions; room temperature electroluminescence; sapphire substrates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961335
  • Filename
    542895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1437299