Title :
Vertical-cavity optical modulator for 1.32 μm grown on a graded (InGaAl)As buffer
Author :
Fritz, I.J. ; Drummond, T.J. ; Lee, S.R. ; Hafich, M.J. ; Howard, A.J. ; Briggs, R.D. ; Vawter, G.A. ; Armendariz, M.G. ; Hietala, V.M.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
10/10/1996 12:00:00 AM
Abstract :
The authors describe an (InGaAl)As/InGaAs vertical-cavity optical transmission modulator operating at 1.32 μm, and having a single pass contrast ΔT/T of 24% at <5 V bias. Device performance and yield have been improved, using a specially designed buffer that compensates for incomplete strain relaxation
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; semiconductor quantum wells; 1.32 micron; 5 V; GaAs; GaAs substrate; InGaAs-InGaAlAs; compensation; graded (InGaAl)As buffer; optical transmission modulator; strain relaxation; vertical-cavity optical modulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961354
