DocumentCode
1437330
Title
Vertical-cavity optical modulator for 1.32 μm grown on a graded (InGaAl)As buffer
Author
Fritz, I.J. ; Drummond, T.J. ; Lee, S.R. ; Hafich, M.J. ; Howard, A.J. ; Briggs, R.D. ; Vawter, G.A. ; Armendariz, M.G. ; Hietala, V.M.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
32
Issue
21
fYear
1996
fDate
10/10/1996 12:00:00 AM
Firstpage
2010
Lastpage
2012
Abstract
The authors describe an (InGaAl)As/InGaAs vertical-cavity optical transmission modulator operating at 1.32 μm, and having a single pass contrast ΔT/T of 24% at <5 V bias. Device performance and yield have been improved, using a specially designed buffer that compensates for incomplete strain relaxation
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; semiconductor quantum wells; 1.32 micron; 5 V; GaAs; GaAs substrate; InGaAs-InGaAlAs; compensation; graded (InGaAl)As buffer; optical transmission modulator; strain relaxation; vertical-cavity optical modulator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961354
Filename
542899
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