Anomalous negative-differentiaI-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

Author

Laih, Lih-Wen ; Wu, Cheng-Zu ; Cheng, Shiou-Ying ; Tsai, Jung-Hui ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

32

Issue

21

fYear

1996

fDate

10/10/1996 12:00:00 AM

Firstpage

2014

Lastpage

2015

Abstract

An Al_0.3Ga_0.7As/In_0.15Ga_0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differentiaI-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6 mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect

Keywords

III-V semiconductors; aluminium compounds; doping profiles; electron traps; gallium arsenide; high electron mobility transistors; hot electron transistors; indium compounds; negative resistance devices; two-dimensional electron gas; 2D electron gas; 59 mA; 6.6 mA; Al_0.3Ga_0.7As-In_0.15Ga_0.85As-GaAs; III-V semiconductors; SDCT; anomalous negative-differentiaI-resistance characteristics; deep-level electron trapping effect; drain current; hot-electron real-space-transfer devices; large signal circuits; logic circuits; peak-to-valley current ratio; step-doped-channel transistor;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19961291

Filename

542901