Title :
Anomalous negative-differentiaI-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)
Author :
Laih, Lih-Wen ; Wu, Cheng-Zu ; Cheng, Shiou-Ying ; Tsai, Jung-Hui ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
10/10/1996 12:00:00 AM
Abstract :
An Al0.3Ga0.7As/In0.15Ga0.85 As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differentiaI-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6 mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; electron traps; gallium arsenide; high electron mobility transistors; hot electron transistors; indium compounds; negative resistance devices; two-dimensional electron gas; 2D electron gas; 59 mA; 6.6 mA; Al0.3Ga0.7As-In0.15Ga0.85 As-GaAs; III-V semiconductors; SDCT; anomalous negative-differentiaI-resistance characteristics; deep-level electron trapping effect; drain current; hot-electron real-space-transfer devices; large signal circuits; logic circuits; peak-to-valley current ratio; step-doped-channel transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961291
