Title :
Electrical properties of PECVD oxide films deposited at room temperature
Author :
Kim, K. ; Song, Y. ; Lee, G.S. ; Song, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
fDate :
10/10/1996 12:00:00 AM
Abstract :
The authors discuss the electrical properties of silicon oxide films deposited at room temperature by PECVD, using disilane as the silicon source. In experiments, the interface trap density of the films with post-metallisation anneal showed a minimum value of 6.33×10 cm-2 eV-1, which is 36.6% lower than that of the as-deposited films. The authors also show that the films annealed in hydrogen-containing ambient reduced the early breakdown failures, resulting in an overall improvement of film integrity
Keywords :
annealing; dielectric thin films; electric breakdown; electron traps; interface states; plasma CVD; silicon compounds; PECVD oxide films; SiO2; disilane source; early breakdown failures; electrical properties; film integrity; interface trap density; post-metallisation anneal;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961313
