Title :
Fabrication of high power InGaAs/AlInGaAs strained SQW lasers on InGaAs ternary substrates
Author :
Moore, A.H. ; Lent, B. ; Bonner, W.A.
Author_Institution :
EG&G Optoelectron., Vaudreuil, Que., Canada
fDate :
10/10/1996 12:00:00 AM
Abstract :
High quality In0.03Ga0.97As ternary substrates have been fabricated by the liquid encapsulated Czochralski (LEG) technique using a semi-infinite melt approach. Lasers using the AlInGaAs/InGaAs alloy system have been fabricated on the conducting substrates for the first time. Pulsed power of 16.2 W at 40 A have been recorded for devices emitting at 1.03 μm. Threshold current densities were 595 A cm-2 and the characteristic temperatures were 100 K. These data demonstrate the commercial potential of ternary substrate manufacture
Keywords :
III-V semiconductors; aluminium compounds; crystal growth from melt; gallium arsenide; gallium compounds; indium compounds; laser transitions; liquid phase epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; substrates; 1.035 micron; 16.2 W; 40 A; In0.03Ga0.97As; InGaAs ternary substrates; InGaAs-AlInGaAs; LEG technique; conducting substrates; fabrication; high power strained SQW lasers; liquid encapsulated Czochralski technique; semi-infinite melt approach;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961350
