Title :
Low-distortion current-mode companding integrator operating at f T of BJT
Author :
Mahattanakul, J. ; Toumazou, C. ; Pookiayaudom, S.
Author_Institution :
Mahanakorn Univ. of Technol., Bankok, Thailand
fDate :
10/10/1996 12:00:00 AM
Abstract :
The authors show that the nonlinear V-I large-signal characteristic of the n-p-n transistor, combined with its nonlinear base-emitter capacitance, can be directly exploited to realise a transistor-only instantaneous current-mode integrator. The resulting circuit offers low distortion and the ability to operate at very high frequency, i.e. in the range of the fT of the BJT device
Keywords :
analogue processing circuits; bipolar transistor circuits; capacitance; electric distortion; integrating circuits; linearisation techniques; BJT device; current-mode companding integrator; low-distortion integrator; n-p-n transistor; nonlinear V-I large-signal characteristic; nonlinear base-emitter capacitance; transistor-only integrator; very high frequency operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961344